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DISCRETE SEMICONDUCTORS DATA SHEET PMBTH81 PNP 1 GHz switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 1 GHz switching transistor FEATURES * Low cost * High transition frequency. 1 DESCRIPTION The PMBTH81 is a general purpose silicon pnp transistor, encapsulated in a SOT23 plastic envelope. Its complement is the PMBTH10. 2 3 PINNING PIN base emitter collector 1 Top view PMBTH81 DESCRIPTION Code: V31 fpage 3 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCEO Ptot Cce Ccb fT Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage total power dissipation collector-emitter capacitance collector-base capacitance transition frequency open base Ts = 45 C (note 1) VCB = 10 V; IB = 0; f = 1 MHz VCB = 10 V; IE = 0; f = 1 MHz VCE = 10 V; IC = 5 mA; f = 100 MHz; Tamb = 25 C CONDITIONS open emitter - - - - - 600 MIN. MAX. 20 20 400 0.65 0.85 - V V mW pF pF MHz UNIT September 1995 2 Philips Semiconductors Product specification PNP 1 GHz switching transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature Ts = 45 C (note 1) open emitter open base open collector CONDITIONS PMBTH81 MIN. - - - - - -65 - MAX. 20 20 3 40 400 150 150 UNIT V V V mA mW C C THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE sat VBE on ICBO IEBO hFE Cce Ccb fT PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter ON voltage collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter capacitance collector-base capacitance transition frequency CONDITIONS open emitter; IC = 10 A; IE = 0 open base; IC = 1 mA; IB = 0 open collector; IE = 10 A; IC = 0 IC = 5 mA; IB = 0.5 mA VCE = 10 V; IC = 5 mA VCB = 10 V; IE = 0 VEB = 2 V; IC = 0 VCE = 10 V; IC = 5 mA VCB = 10 V; IB = 0; f = 1 MHz VCB = 10 V; IE = 0; f = 1 MHz VCE = 10 V; IC = 5 mA; f = 100 MHz; Tamb = 25 C MIN. 20 20 3 - - - - 60 - - 600 MAX. - - - 0.5 0.9 100 100 - 0.65 0.85 - pF pF MHz UNIT V V V V V nA nA PARAMETER from junction to soldering point (note 1) THERMAL RESISTANCE 260 K/W September 1995 3 Philips Semiconductors Product specification PNP 1 GHz switching transistor PMBTH81 handbook, halfpage -30 MRA568 b11 (mS) -50 930 MHz 450 MHz 250 MHz IC = 4 mA 100 MHz handbook, halfpage 120 MRA566 100 MHz IC = 12 mA 250 MHz 8 mA 450 MHz 4 mA 930 MHz b21 (mS) 80 -70 8 mA 40 -90 12 mA -110 -20 20 60 100 140 g11 (mS) 0 -120 -80 -40 0 g21 (mS) 40 VCB = 10 V; Tamb = 25 C. VCB = 10 V; Tamb = 25 C. Fig.2 Common base input admittance (Y11). Fig.3 Forward transfer admittance (Y21). handbook, halfpage 0 MRA570 b12 (mS) -2 100 MHz 250 MHz 450 MHz IC = 12 mA 8 mA 4 mA handbook, halfpage 12 MRA569 b22 (mS) 8 930 MHz IC = 4 mA -4 8 mA 12 mA 4 450 MHz 250 MHz 100 MHz -6 930 MHz -8 -2.5 -2 -1.5 -1 -0.5 0 g12 (mS) 0 0 1 2 3 g22 (mS) 4 VCB = 10 V; Tamb = 25 C. VCB = 10 V; Tamb = 25 C. Fig.4 Reverse transfer admittance (Y12). Fig.5 Common base output admittance (Y22). September 1995 4 Philips Semiconductors Product specification PNP 1 GHz switching transistor PMBTH81 gain handbook, halfpage bandwidth product (MHz) 800 1000 MRA567 600 400 200 0 0 4 8 12 16 20 IC (mA) VCE =10 V; f = 100 MHz. Fig.6 Current gain-bandwidth product as a function of collector current. September 1995 5 Philips Semiconductors Product specification PNP 1 GHz switching transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads PMBTH81 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 September 1995 6 Philips Semiconductors Product specification PNP 1 GHz switching transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values PMBTH81 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 7 |
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